VISHAY SI1304DL

Si1304DL Vishay Siliconix

N-Channel 25-V (D-S) MOSFET

PRODUCT SUMMARY VDS (V) 25

rDS(on) (W)

ID (A)

0.350 @ VGS = 4.5 V

0.75

0.450 @ VGS = 2.5 V

0.66

Qg (Typ) 13 1.3

SOT-323 SC-70 (3-LEADS) G

1 3

S

D

KB

XX

YY

Marking Code

Lot Traceability and Date Code

2

Part # Code Top View

Ordering Information: Si1304DL-T1

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter

Symbol

5 secs

Steady State

Drain-Source Voltage

VDS

25

Gate-Source Voltage

VGS

"8

Continuous Drain Current (TJ = 150_C)a

TA = 25_C TA = 70_C

Pulsed Drain Current

ID

IS TA = 25_C

Maximum Power Dissipationa

TA = 70_C

Operating Junction and Storage Temperature Range

PD

V 0.70

0.75 0.60

0.56

IDM

Continuous Diode Current (Diode Conduction)a

3.0 0.28

0.24

0.33

0.29

0.21

0.19

TJ, Tstg

Unit

−55 to 150

A

W _C

THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain)

Symbol t v 5 sec Steady State Steady State

RthJA RthJF

Typical

Maximum

315

375

380

450

285

340

Unit

_C/W C/W

Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71315 S-41774—Rev. C, 04-Oct-04

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Si1304DL Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter

Symbol

Test Condition

Min

VGS(th)

VDS = VGS, ID = 250 mA

0.6

Typ

Max

Unit

1.3

V

"100

nA

Static Gate Threshold Voltage Gate-Body Leakage

IGSS

Zero Gate Voltage Drain Current

IDSS

On-State Drain Currenta

ID(on)

Drain Source On-State Drain-Source On State Resistancea

Voltagea

VDS = 25 V, VGS = 0 V

1

VDS = 25 V, VGS = 0 V, TJ = 70_C

5

VDS = 5 V, VGS = 4.5 V

mA

3.0

A

VGS = 4.5 V, ID = 0.75 A

0.280

0.350

VGS = 2.5 V, ID = 0.50 A

0.355

0.450

gfs

VDS = 15 V, ID = 0.75 A

1.5

VSD

IS = 0.24 A, VGS = 0 V

0.8

1.2

1.3

2.0

VDS = 15 V, VGS = 4.5 V, ID = 0.75 A

0.31

rDS(on) DS( )

Forward Transconductancea Diode Forward

VDS = 0 V, VGS = "8 V

W S V

Dynamicb Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

11

20

tr

18

30

17

30

11

20

30

60

Rise Time Turn-Off Delay Time

VDD = 15 V, RL = 20 W ID ^ 0.75 A, VGEN = 4.5 V, Rg = 6 W

td(off)

Fall Time

tf

Source-Drain Reverse Recovery Time

trr

nC

0.5

IF = 0.24 A, di/dt = 100 A/ms

ns

Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics

Transfer Characteristics

3.0

3.0 2.5 I D − Drain Current (A)

2.5 I D − Drain Current (A)

TC = −55_C

VGS = 5 thru 2.5 V

2.0 2V

1.5 1.0 0.5

1V 0

2

4

6

8

VDS − Drain-to-Source Voltage (V) www.vishay.com

2

2.0

125_C

1.5 1.0 0.5

1.5 V

0.0

25_C

10

0.0 0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS − Gate-to-Source Voltage (V) Document Number: 71315 S-41774—Rev. C, 04-Oct-04

Si1304DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current

Capacitance 200

0.8

C − Capacitance (pF)

r DS(on) − On-Resistance ( W )

1.0

0.6 VGS = 2.5 V

0.4

VGS = 4.5 V

100

Ciss Coss

50

0.2

0.0 0.0

150

Crss 0 0.5

1.0

1.5

2.0

2.5

0

3.0

5

ID − Drain Current (A)

Gate Charge

20

25

On-Resistance vs. Junction Temperature 1.8

VDS = 15 V ID = 0.75 A

VGS = 4.5 V ID = 0.75 A

1.6

6

rDS(on) − On-Resiistance (Normalized)

V GS − Gate-to-Source Voltage (V)

15

VDS − Drain-to-Source Voltage (V)

8

4

2

1.4 1.2 1.0 0.8

0 0.0

0.5

1.0

1.5

2.0

0.6 −50

2.5

Qg − Total Gate Charge (nC)

Source-Drain Diode Forward Voltage

25

50

75

100

125

150

On-Resistance vs. Gate-to-Source Voltage

r DS(on) − On-Resistance ( W )

TJ = 150_C

TJ = 25_C

0.01

0.001 0.0

0

0.8

1

0.1

−25

TJ − Junction Temperature (_C)

10

I S − Source Current (A)

10

0.6 ID = 0.75 A 0.4

0.2

0.0 0.2

0.4

0.6

0.8

1.0

VSD − Source-to-Drain Voltage (V)

Document Number: 71315 S-41774—Rev. C, 04-Oct-04

1.2

0

2

4

6

8

VGS − Gate-to-Source Voltage (V)

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Si1304DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage

Single Pulse Power, Junction-to-Ambient

0.2

20

16 ID = 250 mA

−0.0 Power (W)

V GS(th) Variance (V)

0.1

−0.1

12 TA = 25_C 8

−0.2 4

−0.3 −0.4 −50

−25

0

25

50

75

100

125

150

0 10−3

10−2

10−1

TJ − Temperature (_C)

Normalized Effective Transient Thermal Impedance

10

100

600

Normalized Thermal Transient Impedance, Junction-to-Ambient

2 1

Duty Cycle = 0.5

0.2 Notes:

0.1

PDM

0.1 0.05

t1

t2 1. Duty Cycle, D =

t1 t2 2. Per Unit Base = RthJA = 360_C/W

0.02

3. TJM − TA = PDMZthJA(t)

Single Pulse

4. Surface Mounted

0.01 10−4

10−3

10−2

10−1 1 Square Wave Pulse Duration (sec)

10

100

600

Normalized Thermal Transient Impedance, Junction-to-Foot

2

Normalized Effective Transient Thermal Impedance

1

Time (sec)

1

Duty Cycle = 0.5

0.2 0.1 0.1

0.05 0.02

Single Pulse 0.01 10−4

10−3

10−2 10−1 Square Wave Pulse Duration (sec)

1

10

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71315. www.vishay.com

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Document Number: 71315 S-41774—Rev. C, 04-Oct-04