FAIRCHILD SS22-S210

SS22 - S210 0.185 (4.699) 0.160 (4.064) 0.083 (2.108) 0.075 (1.905 )

Features •

Glass passivated junctions.

•

High current capability, low VF.

•

For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.

2

1

0.155 (3.937) 0.130 (3.302)

0.220 (5.588) 0.200 (5.080)

SMB/DO-214AA

0.096 (2.438) 0.083 (2.108)

COLOR BAND DENOTES CATHODE

0.050 (1.270) 0.030 (0.762)

0.008 (0.203) 0.004 (0.102)

0.012 (0.305) 0.006 (0.152)

2.0 Ampere Schottky Barrier Rectifiers Absolute Maximum Ratings* Symbol IO

TA = 25°C unless otherwise noted

Parameter

Value

Units

2.0

A

50

A

1.3 13 75

W mW/°C °C/W

RθJA

Average Rectified Current .375 " lead length @ TA = 75°C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient **

Tstg

Storage Temperature Range

-65 to +150

°C

TJ

Operating Junction Temperature

-65 to +125

°C

if(surge) PD

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. **Device mounted on FR-4 PCB 0.013 mm.

Electrical Characteristics

TA = 25°C unless otherwise noted

Parameter

Device

Units

22

23

24

25

26

28

29

210

Peak Repetitive Reverse Voltage

20

30

40

50

60

80

90

100

V

Maximum RMS Voltage

14

21

28

35

42

56

64

80

V

DC Reverse Voltage (Rated VR)

20

30

40

50

60

80

90

100

Maximum Reverse Current TA = 25°C (Note 1) @ rated VR TA = 100°C Maximum Forward Voltage @ 2.0 A

500

0.4 10 700

850

V mA mA mV

Note: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

1998 Fairchild Semiconductor Corporation

SS22-S210, Rev. A

SS22-S210

Discrete POWER & Signal Technologies

(continued)

Typical Characteristics

Forward Current Derating Curve

Forward Characteristics 50 FORWARD CURRENT (A)

FORWARD CURRENT (A)

2

1.5

SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD P.C.B. MOUNTED ON 8.0x8.0mm COPPER PAD AREAS

1

0.5

0 50

60

70

20

TA = 25º C f = 1.0 MHz Vsig = 50mVp-p

10 SS22-24

5

SS28 - S210

1 SS25-26

0.1 0.2

80 90 100 110 120 130 140 150 LEAD TEMPERATURE ( º C)

0.3

Reverse Characteristics

1.1

500 T A = 100 ºC

SS22-24

1

0.1

TA = 75º C SS25-S210

0.01

200 100

TA = 25º C f = 1.0 MHz Vsig = 50mVp-p SS25-S210

50

20

TA = 25º C

0

CAPACITANCE (pF)

SS22-24

20 40 60 80 100 120 140 NORMALIZED REVERSE VOLTAGE (%)

10 0.1

0.5 1 5 10 20 REVERSE VOLTAGE (V)

50 100

Non-Repetitive Surge Current 60 FORWARD SURGE CURRENT (A)

REVERSE CURRENT (mA)

1

Junction Capacitance

10

0.001

0.4 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE (V)

50 8.3ms Single Half Sine-Wave JEDEC Method

40 30 20 10 0

1

2

5 10 20 50 NUMBER OF CYCLES AT 60Hz

100

SS22-S210, Rev. A

SS22-S210

Schottky Barrier Rectifiers

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Definition

Advance Information

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This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

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First Production

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

No Identification Needed

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