FAIRCHILD SGU2N60UFD

SGU2N60UFD Ultra-Fast IGBT General Description

Features

Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.

• • • •

High speed switching Low saturation voltage : VCE(sat) = 2.1 V @ IC = 1.2A High input impedance CO-PAK, IGBT with FRD : trr = 45ns (typ.)

Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls.

C

G GC E

I-PAK

Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL

E TC = 25°C unless otherwise noted

Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds

@ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C

SGU2N60UFD 600 ± 20 2.4 1.2 10 1.5 12 25 10 -55 to +150 -55 to +150

Units V V A A A A A W W °C °C

300

°C

Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

©2002 Fairchild Semiconductor Corporation

Typ. ----

Max. 5.0 5.0 110

Units °C/W °C/W °C/W

SGU2N60UFD Rev. A1

SGU2N60UFD

IGBT

C

Symbol

Parameter

= 25°C unless otherwise noted

Test Conditions

Min.

Typ.

Max.

Units

600

--

--

V

VGE = 0V, IC = 1mA

--

0.6

--

V/°C

VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V

---

---

250 ± 100

uA nA

3.5 ---

4.5 2.1 2.6

6.5 2.6 --

V V V

----

98 18 4

----

pF pF pF

-------------------

15 20 80 95 30 13 43 19 24 115 176 36 27 63 9 3 1.5 7.5

--130 160 --70 --200 250 --100 14 5 3 --

ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH

Min. --

Typ. 1.4

Max. 1.7

Units

TC = 100°C

--

1.3

--

TC = 25°C

--

45

80

TC = 100°C

--

75

--

TC = 25°C

--

1.5

3.0

TC = 100°C

--

2.5

--

TC = 25°C

--

60

135

TC = 100°C

--

120

--

Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES

Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current

VGE = 0V, IC = 250uA

On Characteristics VGE(th) VCE(sat)

G-E Threshold Voltage Collector to Emitter Saturation Voltage

IC = 1.2mA, VCE = VGE IC = 1.2A, VGE = 15V IC = 2.4A, VGE = 15V

Dynamic Characteristics Cies Coes Cres

Input Capacitance Output Capacitance Reverse Transfer Capacitance

VCE = 30V, VGE = 0V, f = 1MHz

Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance

VCC = 300 V, IC = 1.2A, RG = 200Ω, VGE = 15V, Inductive Load, TC = 25°C

VCC = 300 V, IC = 1.2A, RG = 200Ω, VGE = 15V, Inductive Load, TC = 125°C

VCE = 300 V, IC = 1.2A, VGE = 15V Measured 5mm from PKG

Electrical Characteristics of DIODE T

C

Symbol

Parameter

VFM

Diode Forward Voltage

trr

Diode Reverse Recovery Time

Irr

Diode Peak Reverse Recovery Current

Qrr

Diode Reverse Recovery Charge

©2002 Fairchild Semiconductor Corporation

IF = 2A

= 25°C unless otherwise noted

Test Conditions TC = 25°C

IF = 2A, di/dt = 200A/us

V ns A nC

SGU2N60UFD Rev. A1

SGU2N60UFD

Electrical Characteristics of the IGBT T

6 Common Emitter T C = 25℃

5

Collector Current, IC [A]

Collector Current, IC [A]

Common Emitter VGE = 15V TC = 25℃ TC = 125℃

20V

10 15V 8 12V

6

VGE = 10V 4

2

4

3

2

1

0

0 0

2

4

6

8

0.5

1

10

Collector - Emitter Voltage, VCE [V]

Collector - Emitter Voltage, V CE [V]

Fig 2. Typical Saturation Voltage Characteristics

Fig 1. Typical Output Characteristics

4

3.0

V CC = 300V Load Current : peak of square wave

Common Emitter V GE = 15V 2.5 2.4A 3

Load Current [A]

Collector - Emitter Voltage, VCE [V]

SGU2N60UFD

12

1.2A 2 IC = 0.6A

2.0

1.5

1.0

1 0.5

Duty cycle : 50% TC = 100℃ Power Dissipation = 4W

0.0

0 0

30

60

90

120

150

0.1

1

Case Temperature, TC [℃]

10

100

Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level

Fig 4. Load Current vs. Frequency

20

20 Common Emitter TC = 125℃

Collector - Emitter Voltage, VCE [V]

Common Emitter T C = 25℃

Collector - Emitter Voltage, VCE [V]

1000

Frequency [KHz]

16

12

8

4 IC = 0.6A

1.2A

2.4A

0

16

12

8 2.4A 4

1.2A IC = 0.6A

0 0

4

8

12

16

Gate - Emitter Voltage, V GE [V]

Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation

20

0

4

8

12

16

20

Gate - Emitter Voltage, V GE [V]

Fig 6. Saturation Voltage vs. VGE SGU2N60UFD Rev. A1

100

Common Emitter V GE = 0V, f = 1MHz T C = 25℃

Common Emitter V CC = 300V, VGE = ± 15V IC = 1.2A T C = 25℃ T C = 125℃

Cies

Switching Time [ns]

Capacitance [pF]

120

SGU2N60UFD

160

80 Coes 40

Ton

Tr

Cres 0

10

1

10

30

10

100

Fig 7. Capacitance Characteristics

Fig 8. Turn-On Characteristics vs. Gate Resistance

100

Common Emitter V CC = 300V, V GE = ± 15V IC = 1.2A T C = 25℃ T C = 125℃

Common Emitter VCC = 300V, VGE = ± 15V IC = 1.2A TC = 25℃ TC = 125℃

Toff

Eon

Switching Loss [uJ]

Switching Time [ns]

600

500

Gate Resistance, R G [Ω ]

Collector - Emitter Voltage, V CE [V]

Tf Toff 100

Tf

Eoff

Eoff 10

50

5 10

100

500

10

100

Gate Resistance, RG [Ω ]

500

Gate Resistance, RG [Ω ]

Fig 9. Turn-Off Characteristics vs. Gate Resistance

Fig 10. Switching Loss vs. Gate Resistance

100

1000 Common Emitter VCC = 300V, VGE = ± 15V RG = 200 Ω TC = 25℃ TC = 125℃

Switching Time [ns]

Switching Time [ns]

Common Emitter V CC = 300V, V GE = ± 15V RG = 200Ω TC = 25℃ TC = 125℃

Ton

Toff Toff Tf Tf

100

Tr

10 0.5

1.0

1.5

2.0

Collector Current, IC [A]

Fig 11. Turn-On Characteristics vs. Collector Current ©2002 Fairchild Semiconductor Corporation

2.5

0.5

1.0

1.5

2.0

2.5

Collector Current, IC [A]

Fig 12. Turn-Off Characteristics vs. Collector Current SGU2N60UFD Rev. A1

Common Emitter RL = 250 Ω Tc = 25℃

Gate - Emitter Voltage, VGE [ V ]

Common Emitter V CC = 300V, VGE = ± 15V RG = 200 Ω T C = 25℃ T C = 125℃

Switching Loss [uJ]

SGU2N60UFD

15

100

Eon Eon Eoff 10

Eoff 0.5

12

9 300 V 6

200 V V CE = 100 V

3

0 1.0

1.5

2.0

2.5

0

2

4

6

8

10

Gate Charge, Qg [ nC ]

Collector Current, IC [A]

Fig 14. Gate Charge Characteristics

Fig 13. Switching Loss vs. Collector Current

30

20 IC MAX. (Pulsed)

10

10

Collector Current, IC [A]

Collector Current, I C [A]

50us 100us IC MAX. (Continuous)

1㎳

1 DC Operation

0.1

0.01

Single Nonrepetitive Pulse TC = 25℃ Curves must be derated linearly with increase in temperature 0.3

1

Safe Operating Area o

VGE =20V, TC=100 C

1

10

100

0.1

1000

1

10

Collector-Emitter Voltage, V CE [V]

100

1000

Collector-Emitter Voltage, V CE [V]

Fig 16. Turn-Off SOA Characteristics

Fig 15. SOA Characteristics

Thermal Response, Zthjc [℃/W]

10

0.5

1

0.2 0.1 0.05 0.02

0.1

Pdm

0.01

t1

single pulse

t2 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC

0.01 10

-5

10

-4

10

-3

-2

10

-1

10

0

10

10

1

Rectangular Pulse Duration [sec]

Fig 17. Transient Thermal Impedance of IGBT ©2002 Fairchild Semiconductor Corporation

SGU2N60UFD Rev. A1

TC = 25℃ TC = 100℃

V R = 200V IF = 2A T C = 25℃ T C = 100℃

Reverse Recovery Current, Irr [A]

Forward Current, I F [A]

10

1

0.1

1 0

1

2

100

3

Forward Voltage Drop, VFM [V]

500

di/dt [A/us]

Fig 18. Forward Characteristics

Fig 19. Reverse Recovery Current

100

120 V R = 200V IF = 2A T C = 25℃ T C = 100℃

100

Reverce Recovery Time, t rr [ns]

Stored Recovery Charge, Qrr [nC]

SGU2N60UFD

10

30

80

60

40

20

0 100

500

di/dt [A/us]

Fig 20. Stored Charge

©2002 Fairchild Semiconductor Corporation

V R = 200V IF = 2A TC = 25℃ TC = 100℃

80

60

40

20

0 100

500

di/dt [A/us]

Fig 21. Reverse Recovery Time

SGU2N60UFD Rev. A1

I-PAK 2.30 ±0.20

6.60 ±0.20 5.34 ±0.20

0.76 ±0.10

2.30TYP [2.30±0.20]

0.50 ±0.10

16.10 ±0.30

6.10 ±0.20

0.70 ±0.20

(0.50)

9.30 ±0.30

MAX0.96

(4.34)

1.80 ±0.20

0.80 ±0.10

0.60 ±0.20

(0.50)

2.30TYP [2.30±0.20]

0.50 ±0.10

Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation

SGU2N60UFD Rev. A1

SGU2N60UFD

Package Dimension

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

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STAR*POWER is used under license

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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification

Product Status

Definition

Advance Information

Formative or In Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

©2002 Fairchild Semiconductor Corporation

Rev. H5