FAIRCHILD FMS6G15US60S

January 15, 2018 | Author: Anonymous | Category: N/A
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Description

FMS6G15US60S Compact & Complex Module Features

Description

• Short Circuit Rated 10µs @ TC = 100°C, VGE = 15V

Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control and general inverters where short-circuit ruggedness is required.

• High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 15A • High Input Impedance • Built-in 1 Phase Rectifier Circuit • Fast & Soft Anti-Parallel FWD • Built-in NTC Thermistor

Applications • AC & DC Motor Controls • General Purpose Inverters • Robotics • Servo Controls • UPS

4

5

21

23

19

17

18

20

16

13

24

8 3

6

14

9

10

7

11

Package Code : 25PM-AA

©2005 Fairchild Semiconductor Corporation

FMS6G15US60S Rev. B1

15

NTC

12

Internal Circuit Diagram

1

www.fairchildsemi.com

FMS6G15US60S Compact & Complex Module

August 2005

TC = 25°C unless otherwise noted

Symbol Inverter

Converter

Common

Description

FMS6G15US60S

Units

VCES

Collector-Emitter Voltage

600

V

VGES

Gate-Emitter Voltage

± 20

V

IC

Collector Current

ICM (1)

Pulsed Collector Current

IF

Diode Continuous Forward Current

IFM

Diode Maximum Forward Current

PD

Maximum Power Dissipation

@ TC = 25°C

73

W

TSC

Short Circuit Withstand Time

@ TC = 100°C

10

µs

@ TC = 80°C @ TC = 80°C

15

A

30

A

15

A

30

A

VRRM

Repetitive Peak Reverse Voltage

1600

V

IO

Average Output Rectified Current

20

A

IFSM

Surge Forward Current @ 1Cycle at 60Hz, Peak value Non-Repetitive

200

A

I2t

Energy pulse @ 1Cycle at 60Hz

164

A2s

TJ

Operating Junction Temperature

-40 to +150

°C

TSTG

Storage Temperature Range

-40 to +125

°C

VISO

Isolation Voltage

@ AC 1minute

2500

V

Mounting part Screw

@ M4

2.0

N·m

Mounting Torque Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Package Marking and Ordering Information Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FMS6G15US60S

FMS6G15US60S

25PM-AA

--

--

--

(2) TMC2 Relibility test was done under -45°C ~ 125°C

FMS6G15US60S Rev. B1

2

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FMS6G15US60S Compact & Complex Module

Absolute Maximum Ratings

Symbol

Parameter

TC = 25°C unless otherwise noted

Test Conditions

Min.

Typ.

Max.

Units

Off Characteristics BVCES

Collector-Emitter Breakdown Voltage

VGE = 0V, IC = 250µA

600

--

--

V

∆BVCES/ ∆TJ

Temperature Coeff. of Breakdown Voltage

VGE = 0V, IC = 1mA

--

0.6

--

V/°C

ICES

Collector Cut-Off Current

VCE = VCES, VGE = 0V

--

--

250

µA

IGES

Gate - Emitter Leakage Current

VGE = VGES, VCE = 0V

--

--

± 100

nA

5.0

6.5

8.5

V

--

2.1

2.7

V

--

935

--

pF

On Characteristics VGE(th)

Gate - Emitter Threshold Voltage

IC = 15mA, VCE = VGE

VCE(sat)

Collector to Emitter Saturation Voltage

IC = 15A,

VGE = 15V

Dynamic Characteristics Cies

Input Capacitance

Coes

Output Capacitance

Cres

Reverse Transfer Capacitance

VCE = 30V, VGE = 0V, f = 1MHz

--

81

--

pF

--

18

--

pF

--

65

130

ns

--

80

160

ns

Switching Characteristics td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

--

80

160

ns

tf

Fall Time

--

100

200

ns

Eon

Turn-On Switching Loss

--

0.3

--

mJ

Eoff

Turn-Off Switching Loss

--

0.3

--

mJ

--

70

140

ns

--

80

160

ns

--

90

180

ns

--

210

350

ns

VCC = 300 V, IC = 15A, RG = 13Ω, VGE = 15V, Inductive Load, TC = 25°C

td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

Eon

Turn-On Switching Loss

--

0.33

--

mJ

Eoff

Turn-Off Switching Loss

--

0.5

--

mJ

Tsc

Short Circuit Withstand Time

VCC = 300 V, VGE = 15V @ TC = 100°C

10

--

--

µs

Qg

Total Gate Charge

Qge

Gate-Emitter Charge

VCE = 300 V, IC = 15A, VGE = 15V

Qgc

Gate-Collector Charge

FMS6G15US60S Rev. B1

VCC = 300 V, IC = 15A, RG = 13Ω, VGE = 15V, Inductive Load, TC = 125°C

3

--

45

60

nC

--

9

15

nC

--

17

30

nC

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FMS6G15US60S Compact & Complex Module

Electrical Characteristics of IGBT @ Inverter

Symbol VFM trr Irr Qrr

Parameter

TC = 25°C unless otherwise noted

Test Conditions

Diode Forward Voltage

IF = 15A

Diode Reverse Recovery Time

IF = 15A di / dt = 30 A/µs

Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge

Max.

Units V

TC = 25°C

--

1.9

2.8

--

2.0

--

TC = 25°C

--

75

150

TC = 100°C

--

100

--

TC = 25°C

--

1.0

2.0

TC = 100°C

--

1.3

--

TC = 25°C

--

40

150

TC = 100°C

--

65

--

C

Parameter

Typ.

TC = 100°C

Electrical Characteristics of DIODE @ Converter T Symbol

Min.

ns A nC

= 25°C unless otherwise noted

Min.

Typ.

Max.

Units

VFM

Diode Forward Voltage

IF = 20A

Test Conditions TC = 25°C

--

1.1

1.5

V

TC = 100°C

--

1.0

--

IRRM

Repetitive Reverse Current

VR = VRRM

TC = 25°C

--

--

8

TC = 100°C

--

5

--

mA

Thermal Characteristics Symbol Inverter Converter

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case (IGBT Part, per 1/6 Module)

--

1.7

°C/W

RθJC

Junction-to-Case (DIODE Part, per 1/6 Module)

--

2.5

°C/W

Junction-to-Case (DIODE Part, per 1/6 Module)

--

1.5

°C/W

Weight of Module

60

--

g

RθJC

Weight

NTC Thermistor Characteristics Symbol Thermistor

Tol.

Typ.

Units

R25

Rated Resistance @ TC = 25°C

+/- 5 %

4.7

KΩ

B(25/100)

B - Value

+/- 3 %

3530

FMS6G15US60S Rev. B1

Parameter

4

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FMS6G15US60S Compact & Complex Module

Electrical Characteristics of DIODE @ Inverter

FMS6G15US60S Compact & Complex Module

Typical Performance Characteristics Figure 1. Typical Output Characteristics

0 5

V 5 1

V 0 2

0 6 o

TC = 25 C

0 4

0 5

V 2 1

Common Emitter

Common Emitter VGE = 15 V TC = 25℃ ℃℃ TC = 125℃ ------

0 3

] A [ IC , t n e r r u C r o t c e l l o C

0 4 0 3

0 2

V 0 1 =

V E G

0 2

0 1

0 1

] A [ IC , t n e r r u C r o t c e l l o C

Figure 2. Typical Saturation Voltage Characteristics

0

0

]

0 V 1 [

V , e g a t l o V r e t t i m E r 1 o t c e l l o C

8

] V [

6 V , e g a t l o V r 4 e t t i m E r o t 2 c e l l o C

0

E C

E C

Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level

Figure 4. Transient Thermal Impedance

0 . 4 10

T B G I

5 . 2 A 5 1

0 . 2 A 8 = IC

5 . 1

0.1

0 5 1

0 0 1

0 5

0.01 10

] C o [ C T , e r u t a r e p m e T e s C

0 a

0 5 0. 1

-5

10

-4

-3

10

10

-2

10

-1

0

10

1

10

Rectangular Pulse Duration [sec]

Figure 6. Saturation Voltage vs. VGE 0 2

0 2

] V [

Common Emitter TC = 25℃

8

8

A 0 3

A 7 = IC

A 5 1 A 7 = IC

A 5 1

4

A 0 3

4

0

0

0 2

]

6 V 1 [

V , e 2 g 1 a t l o V r e t t 8 i m E e

G

t 4 a

0

0 2

]

6 V 1 [

V , e 2 g 1 a t l o V r e t t 8 i m E e

G

t 4 a

0

E G

E G

FMS6G15US60S Rev. B1

Common Emitter TC = 125℃

2 1

2 1

V , e g a t l o V r e t t i m E r o t c e l l o C

) t a s ( E C

6 1

6 1

V , e g a t l o V r e t t i m E r o t c e l l o C

) t a s ( E C

1

Single Pulse (Thermal Response)

Figure 5. Saturation Voltage vs. VGE ] V [

D R F

Thermal Response, Zthjc [℃/W]

A 0 3

Common Emitter VGE = 15V

0 . 3

V , e g a t l o V r e t t i m E r o t c e l l o C

) t a s ( E C

5 . 3

] V [

5

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(Continued)

Figure 7. Capacitance Characteristics

Figure 8. Turn-On Characteristics vs. Gate Resistance 0 0 0 1

0 0 4 2 s e i C

0 0 1 2

o

TC = 25 C

0 0 8 1

n o T

0 0 2 1 s e r C 0 0 9

r T

0 0 6

0 0 1

] s n [ e m i T g n i h c t i w S

s e o C

0 0 5 1

] F p [ e c n a t i c a p a C

Common Emitter VCC = 300V, VGE = ± 15V IC = 15A TC = 25℃ ℃℃ TC = 125℃ ------

Common Emitter VGE = 0 V, f = 1 MHz

0 0 3 0 0 0 1

0 8

0 6

] [ G R , e c n a t s i s e R e t a G

E C

Figure 9. Turn-Off Characteristics vs. Gate Resistance

Figure 10. Switching Loss vs. Gate Resistance

Common Emitter VCC = 300V, VGE = ± 15V IC = 15A TC = 25℃ ℃℃ TC = 125℃ ------

0 0 0 1

Common Emitter VCC = 300V, VGE = ± 15V IC = 15A TC = 25℃ ℃℃ TC = 125℃ ------

0 0 0 1 f f o E n o E

f T

f f o E

] J u [ s s o L g n i h c t i w S

f f o T

] s n [ e m i T g n i h c t i w S

0 4

0 2

] V [

0 1V , e g a t l o V r e t t i m 1E r o t c e l l o C

1 . 0



f T

0 0 1

0 0 1 0 0 1

0 8

0 6

0 4

0 2

0 0 1

0 8

0 6

0 4

0 2

] [ G R , e c n a t s i s e R e t a G

] [ G R , e c n a t s i s e R e t a G Ω



Figure 11. Turn-On Characteristics vs. Collector Current

Figure 12. Turn-Off Characteristics vs. Collector Current

0 0 0 1 0 0 0 1

Common Emitter VGE = ± 15V, RG = 13Ω TC = 25℃ ℃℃ TC = 125℃ ------

r T

f f f f of o T T T

] s n [ e m i T g n i h c t i w S

n o T

0 0 1

] s n [ e m i T g n i h c t i w S

Common Emitter VGE = ± 15V, RG = 13Ω TC = 25℃ ℃℃ TC = 125℃ ------

0 3

5 2

] A [ c I , 0 t 2 n e r r u C r 5 o 1 t c e l l o C

0 1

5

6

f T

0 0 1

0 3

5 2

] A [ c I 0 , 2 t n e r r u C 5 r 1 o t c e l l o

0 C 1

5

FMS6G15US60S Rev. B1

www.fairchildsemi.com

FMS6G15US60S Compact & Complex Module

Typical Performance Characteristics

(Continued)

Figure 13. Switching Loss vs. Collector Current

Figure 14. Gate Charge Characteristics 5 1

0 0 0 0 1

0

1 . 0

[A]

10

C

Collector Current, I

DC Operation

1 1 0 . 0

Single Nonrepetitive Pulse T C = 25 ℃ Curves must be derated linearly with increase in temperature

1

0.1

0 0 0 1

0 0 1

0 1

1

1 . 0

Single Nonrepetitive Pulse T J ≤ 125℃ VGE = 15V RG = 13 Ω 0

100

] V [

V , e g a t l o V r e t t i m E r o t c e l l o C

400

500

600

700

20

Peak Reverse Recovery Current, I rr [A] Reverse Recovery Time, T rr [x10ns]

[A] F

30

20

10

0 2

3

4

10

T rr

Irr

1

Common Cathode di/dt = 30A/㎲ T C = 25℃ T C = 100℃ --------0.1 4

Forward Voltage, VF [V]

FMS6G15US60S Rev. B1

300

Figure 18. Reverse Recovery Characteristics

Common Cathode VGE = 0V T C = 25℃ T C = 125℃

1

200

Collector-Emitter Voltage, VCE [V]

E C

Forward Current, I

0 5

0 4

0 1

100us

Figure 17. Forward Characteristics

0

0 3

] C n [ g Q , e g r a h C e t a G

50 us

IC MAX. (Continuous)

1 ms

40

0 2

0 1

0

0 3

5 2

0 2

5 1

] A [ c I , t n e r r u C r o t c e l l o

0 C 1

0 0 1

50

C

50

V 0 0 3 V 0 0 2

3

f n f o o E E

5

Figure 16. RBSOA Characteristics

IC MAX. (Pulsed)

I , t n e r r u C r o t c e l l o C

C C

o

TC = 25 C

6

f f o E 0 0 1

Figure 15. SOA Characteristics

] A [

V 0 0 1 =

E G

Common Emitter RL = 20 Ω

9

0 0 0 1

V , e g a t l o V r e t t i m E e t a G

2 1

] V [

V

Common Emitter VGE = ± 15V, RG = 13Ω TC = 25℃ ℃℃ TC = 125℃ ------

] J u [ s s o L g n i h c t i w S

FMS6G15US60S Compact & Complex Module

Typical Performance Characteristics

8

12

16

Forward Current, IF [A]

7

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(Continued)

Figure 19. Rectifier (Converter) Characteristics

Figure 20. Rectifier (Converter) Characteristics 0 0 1

0 0 0 1

C o 5 2

0 1

C o 5 2 1 = C T

0 1 1

1

C o 5 2

1 . 0 1 0 . 0

] A u [ IR , t n e r r u C e s r e v e R

C o 5 2 1 = C T

0 0 1 3 E 1

1 . 0 4 . 1

2 . 1

0 . 1

8 . 0

] V [ VF , e g a t l o V s u o e n a t n a t

6 s . n 0 I

0 0 6 1

0 0 2 1

0 0 8

] V [ VR , e g a t l o V e s r e v

0 e 0 R 4

0

4 . 0

] A [ IF , t n e r r u C d r a w r o F s u o e n a t n a t s n I

Figure 21. NTC Characteristics 6 1 2 1



] K [ R , e c n a t s i s e R

8 4 0 5 2 1

0 0 1

] C o [ 5 7 T , e r u t a r 0 e 5 p m e T

5 2

0

FMS6G15US60S Rev. B1

8

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FMS6G15US60S Compact & Complex Module

Typical Performance Characteristics

FMS6G15US60S Compact & Complex Module

Mechanical Dimensions

25PM-AA

-. Pin Coordinate

Name Plate

82.2 ±0.20 +0.20

x

y

1

0.0

0.0

2

-3.0

0.0

3

-6.0

0.0

4

-13.0

0.0

5

-18.0

0.0

6

-25.0

0.0

7

-29.0

0.0

8

-32.0

0.0

71.0 -0.10

4- Ø6.0 4- Ø2.0

Coordinate

Pin #No

±0.10 Dp

57.0 ±0.20

6.0

+0.20

22

17.5 ±0.20

1

4.3±0.20

23.0±0.15

21.0 ±0.20

3.2 -0.10

+0.20

11.2 -0.10

+0.20

Ø1.0 ±0.05

+0.20

+0.20

5.1 -0.10

4.3±0.20

+0.20 16.7 -0.10

14.0±0.15

12

16.3 -0.10

+0.20

30.8 -0.10

37.9 ±0.20

15

2- Ø4.3 -0.00 Mounting-Hole

9

-35.0

0.0

10

-38.0

0.0

11

-46.5

0.0

12

-49.5

0.0

13

-49.5

11.5

14

-49.5

20.0

15

-49.5

28.0

16

-32.0

28.0

17

-29.0

28.0

18

-23.0

28.0

19

-20.0

28.0

20

-14.0

28.0

21

-11.0

28.0

22

3.5

28.0

23

3.5

20.0

24

3.5

11.5

25

3.5

5.5

* datum pin : #1 * Pin Tilt : ±0.15

Dimensions in Millimeters

FMS6G15US60S Rev. B1

9

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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™

FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™

Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™

ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™

PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6

SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™

DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification

Product Status

Definition

Advance Information

Formative or In Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16

10 FMS6G15US60S Rev. B1

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FMS6G15US60S Compact & Complex Module

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