FAIRCHILD FKPF12N60

FKPF12N60 / FKPF12N80

FKPF12N60 / FKPF12N80 Application Explanation • • • •

Switching mode power supply, light dimmer, electric flasher unit, hair drier TV sets, stereo, refrigerator, washing machine Electric blanket, solenoid driver, small motor control Photo copier, electric tool

2 1: T1 2: T2 3: Gate 3 1 2 3

1

TO-220F

Bi-Directional Triode Thyristor Planar Silicon Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

Rating

Parameter (Note1 )

FKPF12N60 600

Units

FKPF12N80 800

VDRM

Repetitive Peak Off-State Voltage

Symbol IT (RMS)

Parameter RMS On-State Current

Conditions Commercial frequency, sine full wave 360° conduction, TC=82°C

ITSM

Surge On-State Current

I2t

V

Rating 12

Units A

60Hz sinewave 1 full cycle, peak value, non-repetitive

120

A

I2t for Fusing

Value corresponding to 1 cycle of halfwave 60Hz, surge on-state current

60

A2s

di/dt

Critical Rate of Rise of On-State Current

IG = 2x IGT, tr ≤ 100ns

50

A/µs

PGM

Peak Gate Power Dissipation

TC = +80°C, Pulse Width = 1.0µs

5

W

PG (AV)

Average Gate Power Dissipation

TC = +80°C, t = 8.3ms

0.5

W

VGM

Peak Gate Voltage

IGM

Peak Gate Current

Pulse Width ≤ 1.0µsec; TC = 90°C

10

V

2

A

TJ

Junction Temperature

- 40 ~ 125

°C

TSTG

Storage Temperature

- 40 ~ 125

°C

Viso

Isolation Voltage

1500

V

Ta=25°C, AC 1 minute, T1 T2 G terminal to case

Thermal Characteristic Symbol Rth(J-C)

Parameter Thermal Resistance

©2002 Fairchild Semiconductor Corporation

Test Condition Junction to case (Note 4)

Min. -

Typ. -

Max. 3.0

Units °C/W

Rev. A1, December 2002

Symbol IDRM

Parameter Repetieive Peak Off-State Current

VTM

On-State Voltage

VGT

Gate Trigger Voltage (Note 2)

Test Condition

Typ. -

Max. 20

Units µA

-

-

1.5

V

T2(+), Gate (+)

-

-

1.5

V

T2(+), Gate (-)

-

-

1.5

V

T2(-), Gate (-)

-

-

1.5

V

T2(+), Gate (+)

-

-

30

mA

T2(+), Gate (-)

-

-

30

mA

T2(-), Gate (-)

-

-

30

mA

0.2

-

-

V

TC=25°C, ITM=17A Instantaneous measurement I II III

VD=6V, RL=6Ω, RG=330Ω

I Gate Trigger Current (Note 2)

IGT

Min. -

VDRM applied

II III

VD=6V, RL=6Ω, RG=330Ω

VGD

Gate Non-Trigger Voltage

TJ=125°C, VD=1/2VDRM

IH

Holding Current

VD = 12V, ITM = 1A

50

mA

IL

Latching Current

VD = 12V, IG = 1.2IGT

50

mA

I, III II

70 VDRM = Rated, Tj = 125°C, Exponential Rise

dv/dt

Critical Rate of Rise of Off-State Voltag

(dv/dt)C

Critical-Rate of Rise of Off-State Commutating Voltage (Note 3)

300 10

-

mA V/µs

-

V/µs

Notes: 1. Gate Open 2. Measurement using the gate trigger characteristics measurement circuit 3. The critical-rate of rise of the off-state commutating voltage is shown in the table below 4. The contact thermal resistance RTH(c-f) in case of greasing is 0.5 °C/W

VDRM (V)

FKPF12N60

FKPF12N80

Commutating voltage and current waveforms (inductive load)

Test Condition

Supply Voltage

1. Junction Temperature TJ=125°C 2. Rate of decay of on-state commutating current (di/dt)C = - 6.0A/ms 3. Peak off-state voltage VD = 400V

Time (di/dt)C

Main Current

Time

Time

Main Voltage (dv/dt)C

VD

Quadrant Definitions for a Triac T2 Positive + (+) T2

Quadrant II

(+) IGT GATE

(+) T2

Quadrant I

(+) IGT GATE T1

T1

(+) T2

(+) T2

IGT -

Quadrant III

+ IGT

(+) IGT GATE

(+) IGT GATE T1

Quadrant IV T1

T2 Negative

©2002 Fairchild Semiconductor Corporation

Rev. A1, December 2002

FKPF12N60 / FKPF12N80

Electrical Characteristics TC=25°C unless otherwise noted

FKPF12N60 / FKPF12N80

Typical Curves

200

50

SURGE ON-STATE CURRENT [A]

180

ON-STATE CURRENT [A]

40

30

Tj=25℃ Tj=125℃ 20

10

160 140 120 100 80 60 40 20 0

0 0.0

0.5

1.0

1.5

1

2.0

10

Figure 1. Maximum On-state Characteristics

Figure 2. Rated Surge On-state Current

1000

NORMALIZED GATE TRIGGER CURRENT [%]

100

GATE VOLTAGE [V]

VGM=10V PGM=5W

10

PG(AV)=0.5W

IGM=2A

VGT=1.5V

1

0.1 10

IRGTⅠ

VGD=0.2V

IFGTⅠ, IRGTⅢ 100

1000

10000

IFGTⅠ, IRGTⅠ

100

IFGTⅢ

10 -60

-40

-20

GATE CURRENT [mA]

0

20

40

60

80

100

120

140

JUNCTION TEMPERATURE [℃]

Figure 3. Gate Characteristics

Figure 4. Gate Trigger Current vs Tj

1000

10

JUNCTION TO CASE

TRANSIENT THERMAL IMPEDANCE o Rth(j-c) [ C/W]

NORMALIZED GATE TRIGGER VOLTAGE [%]

100

CONDUCTION TIME (CYCLES AT 60Hz)

ON-STATE VOLTAGE [V]

100

10 -60

-40

-20

0

20

40

60

80

100

120

JUNCTION TEMPERATURE [℃]

Figure 5. Gate Trigger Voltage vs Tj

©2002 Fairchild Semiconductor Corporation

140

1

0.1 1E-3

0.01

0.1

1

10

100

TIME [s]

Figure 6. Transient Thermal Impedance

Rev. A1, December 2002

FKPF12N60 / FKPF12N80

Typical Curves (Continues) 160

① NO HEAT SINK ② 30 × 30 × 2 ㎜ AL HEAT SINK ③ 50 × 50 × 2 ㎜ AL HEAT SINK ④ 70 × 70 × 2 ㎜ AL HEAT SINK ⑤ 100 × 100 × 2 ㎜ AL HEAT SINK

120

100

CURVES APPLY REGARDLESS OF CONDUCTION ANGLE

140

CASE TEMPERATURE [℃]

Maximum Allowable Ambient Temperature [℃]

140

80

60

40

120 100 80 60

360° CONDUCTION RESISTIVE, INDUCTIVE LOAD

40

20

②

①

③

④

20

⑤

0 0

2

4

6

8

10

0

12

0

2

4

IT(RMS) [A]

ON STATE POWER DISSIPATION [W]

16

360° CONDUCTION RESISTIVE, INDUCTIVE LOAD

12 10 8 6 4 2 0 0

2

4

6

8

10

12

14

16

10

12

14

16

5

10

TYPICAL EXAMPLE

4

10

3

10

2

10

-60

-40

RMS ON-STATE CURRENT [A]

-20

0

20

40

60

80

100

120

140

JUNCTION TEMPERATURE [V]

Figure 9. Maximum On-state Power Dissipation

Figure 10. Repetitive Peak Off-state Current vs Junction Temperature

1000

1000

TYPICAL EXAMPLE LATCHING CURRENT [mA]

NORMALIZED HOLDING CURRENT [%]

8

Figure 8. Allowable Case Temperature vs Rms On-state Current

NORMALIZED REPETIVITE OFF-STATE CURRENT [%]

Figure 7. Allowable Ambient Temperature vs Rms On-state Current

14

6

RMS ON-STATE CURRENT [A]

100

10 -60

-40

-20

0

20

40

60

80

100

120

140

100

10

1 -60

T2(+), G(-) TYPICAL EXEMPLE

T2(± ), G(+) TYPICAL EXEMPLE

-40

-20

0

20

40

60

80

100

120

JUNCTION TEMPERATURE [℃]

JUNCTION TEMPERATURE

Figure 11. Holding Current vs Junction Temperature

Figure 12. Laching Current vs Junction Temperature

©2002 Fairchild Semiconductor Corporation

140

Rev. A1, December 2002

FKPF12N60 / FKPF12N80

Typical Curves (Continues)

1000

NORMALIZED GATE TRIGGER CURRENT [%]

NORMALIZED BREAKOVER VOLTAGE [%]

160

TYPICAL EXAMPLE 140

120

100

80

60

40

20

0 -60

-40

-20

0

20

40

60

80

100

120

IRGTⅠ IRGTⅢ 100

IFGTⅠ

10 1

140

10

100

GATE CURRENT PULSE WIDTH [uS]

JUNCTION TEMPERATURE [V]

Figure 13. Breakover Voltage vs. Junction Temperature

Figure 14. Gate Trigger Current vs. Gate Current Pulse Width

TYPICAL EXAMPLE Tj=125℃

140

CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE [V/us]

NORMALIZED BREAKOVER VOLTAGE [%]

160

TYPICAL EXAMPLE Tj = 125℃ IT = 4A τ = 500us VD = 200V f = 3Hz

100

120 100

Ⅰ QUADRANT

80 60

Ⅲ QUADRANT

40 20

Ⅰ QUADRANT

10

Ⅲ QUADRANT 1

0

1

10

2

10

10

3

RATE OF RISE OF-STATE VOLTAGE [V/us]

Figure 15. Breakover Voltage vs. Rate of Rise of Off-State Voltage

©2002 Fairchild Semiconductor Corporation

10

4

10

1

10

2

10

3

10

RATE OF DECAY OF ON-STATE COMMUTATION CURRENT [A/ms]

Figure 16. Commutation Characteristics

Rev. A1, December 2002

FKPF12N60 / FKPF12N80

Package Dimension

3.30 ±0.10

TO-220F 10.16 ±0.20

2.54 ±0.20

ø3.18 ±0.10

(7.00)

(1.00x45°)

15.87 ±0.20

15.80 ±0.20

6.68 ±0.20

(0.70)

0.80 ±0.10 ) 0°

(3

9.75 ±0.30

MAX1.47

#1 +0.10

0.50 –0.05

2.54TYP [2.54 ±0.20]

2.76 ±0.20

2.54TYP [2.54 ±0.20]

9.40 ±0.20

4.70 ±0.20

0.35 ±0.10

Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation

Rev. A1, December 2002

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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification

Product Status

Definition

Advance Information

Formative or In Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

©2002 Fairchild Semiconductor Corporation

Rev. I1