FAIRCHILD FDS8958A_07

FDS8958A

tm

Dual N & P-Channel PowerTrench MOSFET General Description

Features

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.

•

Q1:

•

Q2:

P-Channel

-5A, -30V

RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V

•

Fast switching speed

•

High power and handling capability in a widely used surface mount package

DD2 DD2

5

DD1

Q2

4

6 7

G2 S2 G

SO-8 Pin 1 SO-8

G1 S1 S

3 Q1

2

8

S

1

S

Absolute Maximum Ratings Symbol

RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

D1 D

N-Channel

7.0A, 30V

TA = 25°C unless otherwise noted

Parameter

VDSS VGSS

Drain-Source Voltage Gate-Source Voltage

ID

Drain Current

PD

- Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation

Q1

- Continuous

30

(Note 1a)

±20 -5

(Note 1a)

20 2 1.6

-20 2 1.6

W

0.9 54

0.9 13

mJ

Single Pulse Avalanche Energy

TJ, TSTG

Operating and Storage Junction Temperature Range

(Note 3)

Thermal Resistance, Junction-to-Case

A

-55 to +150

°C

(Note 1a)

78

°C/W

(Note 1)

40

°C/W

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

V V

30

EAS

RθJC

Units

±20 7

(Note 1c)

RθJA

Q2

Package Marking and Ordering Information Device Marking

Device

Reel Size

Tape width

Quantity

FDS8958A

FDS8958A

13”

12mm

2500 units

2007 Fairchild Semiconductor Corporation

FDS8958A Rev F1(W)

FDS8958A

February 2007

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Type Min Typ Max Units

Off Characteristics BVDSS

IGSSF

Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward

IGSSR

Gate-Body Leakage, Reverse VGS = -20 V,

∆BVDSS ∆TJ IDSS

On Characteristics

VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA ID = 250 µA, Referenced to 25°C ID = -250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VDS = -24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 0 V

Q1 Q2 Q1 Q2 Q1 Q2 All

30 -30

V 25 -23

All

mV/°C 1 -1 100

µA

-100

nA

3 -3

V

nA

(Note 2)

VGS(th)

Gate Threshold Voltage

∆VGS(th) ∆TJ RDS(on)

Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance

ID(on)

On-State Drain Current

gFS

Forward Transconductance

VDS = VGS, ID = 250 µA VDS = VGS, ID = -250 µA ID = 250 µA, Referenced to 25°C ID = -250 µA, Referenced to 25°C VGS = 10 V, ID = 7 A VGS = 10 V, ID = 7 A, TJ = 125°C ID = 6 A VGS = 4.5 V, VGS = -10 V, ID = -5 A VGS = -10 V, ID = -5 A, TJ = 125°C VGS = -4.5 V, ID = -4 A VGS = 10 V, VDS = 5 V VGS = -10 V, VDS = -5 V VDS = 5 V, ID = 7 A ID =-5 A VDS = -5 V,

Q1 Q2 Q1 Q2 Q1

Q1 VDS = 15 V, VGS = 0 V, f = 1.0 MHz

Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2

1 -1

Q2 Q1 Q2 Q1 Q2

1.9 -1.7 -4.5 4.5 19 27 24

28 42 40

42 57 65

52 78 80

20 -20

mV/°C mΩ

A 25 10

S

575 528 145 132 65 70 2.1 6.0

pF

Dynamic Characteristics Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Q2 Reverse Transfer Capacitance VDS = -15 V, VGS = 0 V, f = 1.0 MHz

RG

Gate Resistance

VGS = 15 mV,

f = 1.0 MHz

pF pF Ω

FDS8958A Rev F1 (W)

FDS8958A

Electrical Characteristics

Symbol

(continued)

Parameter

Switching Characteristics td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

TA = 25°C unless otherwise noted

Test Conditions

Type Min

Typ

Max Units

(Note 2)

Q1 VDD = 15 V, ID = 1 A, VGS = 10V, RGEN = 6 Ω Q2 VDD = -15 V, ID = -1 A, VGS = -10V, RGEN = 6 Ω Q1 VDS = 15 V, ID = 7 A, VGS = 10 V Q2 VDS = -15 V, ID = -5 A,VGS = -10 V

Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2

8 7 5 13 23 14 3 9 10.7 9.6 1.7 2.2 2.1 1.7

16 14 10 24 37 25 6 17 26 13

ns ns ns ns nC nC nC

Drain–Source Diode Characteristics and Maximum Ratings IS

Maximum Continuous Drain-Source Diode Forward Current

VSD

Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge

trr Qrr

VGS = 0 V, IS = 1.3 A VGS = 0 V, IS = -1.3 A Q1 IF = 7 A, diF/dt = 100 A/µs Q2 IF = -5 A, diF/dt = 100 A/µs

(Note 2) (Note 2)

Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2

0.75 -0.88 19 19 9 6

1.3 -1.3 1.2 -1.2

A V nS nC

Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user' s board design.

a) 78°/W when mounted on a 0.5 in2 pad of 2 oz copper

b) 125°/W when 2 mounted on a .02 in pad of 2 oz copper

c) 135°/W when mounted on a minimum pad.

Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Starting TJ = 25°C, L = 3mH, IAS = 6A, VDD = 30V, VGS = 10V (Q1). Starting TJ = 25°C, L = 3mH, IAS = 3A, VDD = 30V, VGS = 10V (Q2).

FDS8958A Rev F1 (W)

FDS8958A

Electrical Characteristics

FDS8958A

Typical Characteristics: Q1 (N-Channel)

VGS = 10.0V

2.2 4.0V

3.5V

RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE

20

ID, DRAIN CURRENT (A)

16

6.0V

4.5V

12

8

3.0V 4

1.8

1.4

0

4.5V

5.0

6.0V 10.0V

1

0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V)

2

0

Figure 1. On-Region Characteristics.

4

8 12 ID, DRAIN CURRENT (A)

16

20

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.

1.6

0.08 ID = 7A VGS = 10.0V

1.4

RDS(ON), ON-RESISTANCE (OHM)

RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE

4.0

0.6

0

1.2

1

0.8

0.6

ID = 3.5A

0.07 0.06 0.05 TA = 125oC

0.04 0.03 TA = 25oC 0.02 0.01

-50

-25

0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC)

125

150

2

Figure 3. On-Resistance Variation with Temperature.

4 6 8 VGS, GATE TO SOURCE VOLTAGE (V)

10

Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100

20

VGS = 0V

IS, REVERSE DRAIN CURRENT (A)

VDS = 5V 16

ID, DRAIN CURRENT (A)

VGS = 3.5V

12

TA = 125oC

-55oC

8 25oC 4

0

10 TA = 125oC

1 0.1

25oC

0.01

-55oC

0.001

0.0001 1.5

2

2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

4

0

0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V)

1.2

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

FDS8958A Rev F1 (W)

FDS8958A

Typical Characteristics: Q1 (N-Channel)

10

800

VGS, GATE-SOURCE VOLTAGE (V)

ID = 7A

VDS = 10V

f = 1MHz VGS = 0 V

20V

8

CAPACITANCE (pF)

600 15V

6

4

2

Ciss 400

Coss 200

Crss 0

0 0

2

4 6 8 Qg, GATE CHARGE (nC)

10

0

12

Figure 7. Gate Charge Characteristics.

5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V)

20

Figure 8. Capacitance Characteristics.

100 10

ID, DRAIN CURRENT (A)

10

IAS, AVALANCHE CURRENT (A)

100µs

RDS(ON) LIMIT 1ms 10ms 1s

1

100ms

10s DC VGS = 10V SINGLE PULSE RθJA = 135oC/W

0.1

o

Tj=25

Tj=125

TA = 25 C 1 0.01

0.01 0.1

1 10 VDS, DRAIN-SOURCE VOLTAGE (V)

100

0.1

1

10

100

tAV, TIME IN AVALANCHE (mS)

Figure 9. Maximum Safe Operating Area.

Figure 10. Unclamped Inductive Switching Capability Figure

P(pk), PEAK TRANSIENT POWER (W)

50 SINGLE PULSE RθJ A = 135°C/W TA = 25°C

40

30

20

10

0 0.001

0.01

0.1

1

10

100

1000

t 1, TIME (sec)

Figure 11. Single Pulse Maximum Power Dissipation.

FDS8958A Rev F1 (W)

FDS8958A

Typical Characteristics: Q2 (P-Channel)

2

-ID, DRAIN CURRENT (A)

VGS = -10V

-6.0V V

RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE

30 -5.0V V -4.5V V

20

-4.0V 10

-3.5V -3.0V

0

1.8

VGS=-4.0V

1.6 -4.5V 1.4

-5.0V -6.0V -7.0V

1.2

1

2

3

4

5

6

0

6

12

-VDS, DRAIN TO SOURCE VOLTAGE (V)

18

24

30

-ID, DRAIN CURRENT (A)

Figure 12. On-Region Characteristics.

Figure 13. On-Resistance Variation with Drain Current and Gate Voltage. 0.25

1.6

ID = -5A VGS = -10V

RDS(ON), ON-RESISTANCE (OHM)

RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE

-10V

1 0.8

0

1.4

1.2

1

0.8

0.6

ID = -2.5A 0.2

0.15 TA = 125oC 0.1 TA = 25oC 0.05

0 -50

-25

0

25

50

75

100

125

150

2

4

TJ, JUNCTION TEMPERATURE (oC)

6

8

10

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 14. On-Resistance Variation with Temperature.

Figure 15. On-Resistance Variation with Gate-to-Source Voltage.

15

100

25oC

TA = -55oC

12

-IS, REVERSE DRAIN CURRENT (A)

VDS = -5V -ID, DRAIN CURRENT (A)

-8.0V

125oC 9

6

3

0 1

1.5

2

2.5

3

3.5

4

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 16. Transfer Characteristics.

4.5

VGS =0V

10

TA = 125oC

1

25oC

0.1

-55oC

0.01 0.001 0.0001 0

0.2

0.4

0.6

0.8

1

1.2

1.4

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 17. Body Diode Forward Voltage Variation with Source Current and Temperature.

FDS8958A Rev F1 (W)

FDS8958A

Typical Characteristics: Q2 (P-Channel)

800 ID = -5A

VDS = -5V -15V

6

4

2

600

Ciss

500 400 300

Coss

200 100

0 0

2

4

6

8

Crss

0

10

0

Qg, GATE CHARGE (nC)

5

10

15

20

25

30

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 18. Gate Charge Characteristics.

Figure 19. Capacitance Characteristics.

100

10

IAS, AVALANCHE CURRENT (A)

100µs

RDS(ON) LIMIT

10

1ms 10ms 100ms 1s

1

10s DC

VGS = -10V SINGLE PULSE RθJA = 125oC/W

0.1

TA = 25oC 0.01 0.1

1

10

Tj=25 Tj=125

1 0.01

100







0.1

1

10

tAV, TIME IN AVALANCHE (mS)

-VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 20. Maximum Safe Operating Area.

Figure 21. Unclamped Inductive Switching Capability Figure

50

P(pk), PEAK TRANSIENT POWER (W)

-ID, DRAIN CURRENT (A)

f = 1 MHz VGS = 0 V

700

-10V

8

CAPACITANCE (pF)

-VGS, GATE-SOURCE VOLTAGE (V)

10

SINGLE PULSE R θJ A = 125°C/W TA = 25°C

40

30

20

10

0 0.001

0.01

0.1

1

10

100

1000

t 1 , TIME (sec)

Figure 22. Single Pulse Maximum Power Dissipation. FDS8958A Rev F1 (W)

FDS8958A

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

Typical Characteristics: Q2 (P-Channel)

1 D = 0.5

RθJA(t) = r(t) * RθJA RθJA = 135 /W

0.2

0.1



0.1 0.05

P(pk)

0.02

0.01

t1

0.01 SINGLE PULSE

0.001 0.0001

0.001

t2

T J - TA = P * RθJA(t) Duty Cycle, D = t1 / t2

0.01

0.1

1

10

100

1000

t1, TIME (sec)

Figure 23. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

FDS8958A Rev F1 (W)

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As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22

FDS8958A Rev F1 (W)

FDS8958A

TRADEMARKS