FAIRCHILD FDP20N50F_11

UniFETTM

FDP20N50F / FDPF20N50FT N-Channel MOSFET, FRFET 500V, 20A, 0.26Ω Features • RDS(on) = 0.22Ω ( Typ.)@ VGS = 10V, ID = 10A

Description

• Low gate charge ( Typ. 50nC)

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

• Low Crss ( Typ. 27pF) • Fast reverse recovery switching of built-in diode

This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.

• Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant

D

G

G D S

TO-220 FDP Series

TO-220F FDPF Series

GD S

S

MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS

Drain to Source Voltage

Parameter

VGSS

Gate to Source Voltage

FDP20N50F

FDPF20N50FT 500

Units V

±30 -Continuous (TC = 25oC)

V

20

20*

12.9

12.9*

ID

Drain Current

IDM

Drain Current

EAS

Single Pulsed Avalanche Energy

IAR

Avalanche Current

(Note 1)

20

A

EAR

Repetitive Avalanche Energy

(Note 1)

25

mJ

dv/dt

Peak Diode Recovery dv/dt

-Continuous (TC = 100oC) - Pulsed

(Note 1)

80*

Power Dissipation

TJ, TSTG

Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds

- Derate above 25oC

A

1110

(Note 3) (TC = 25oC)

PD

TL

80

(Note 2)

A

mJ

20

V/ns

250

38.5

W

2.0

0.3

W/oC

-55 to +150

o

C

300

o

C

*Drain current limited by maximum junction temperature

Thermal Characteristics FDP20N50F

FDPF20N50FT

RθJC

Symbol

Thermal Resistance, Junction to Case

Parameter

0.5

3.3

RθCS

Thermal Resistance, Case to Sink Typ.

0.5

-

RθJA

Thermal Resistance, Junction to Ambient

62.5

62.5

©2011 Fairchild Semiconductor Corporation FDP20N50F / FDPF20N50FT Rev. C1

1

Units o

C/W

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FDP20N50F / FDPF20N50FT N-Channel MOSFET

November 2011

Device Marking FDP20N50F

Device FDP20N50F

Package TO-220

Reel Size -

Tape Width -

Quantity 50

FDPF20N50FT

FDPF20N50FT

TO-220F

-

-

50

Electrical Characteristics Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

500

-

-

V

-

0.7

-

V/oC

Off Characteristics BVDSS ΔBVDSS / ΔTJ

Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Body Leakage Current

ID = 250μA, VGS = 0V, TJ = 25oC ID = 250μA, Referenced to

25oC

VDS = 500V, VGS = 0V

-

-

10

VDS = 400V, TC = 125oC

-

-

100

VGS = ±30V, VDS = 0V

-

-

±100

3.0

-

5.0

V

-

0.22

0.26

Ω

-

25

-

S

μA nA

On Characteristics VGS(th) RDS(on)

Gate Threshold Voltage

VGS = VDS, ID = 250μA

Static Drain to Source On Resistance

VGS = 10V, ID = 10A

gFS

Forward Transconductance

VDS = 20V, ID = 10A

(Note 4)

Dynamic Characteristics Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Qg(tot)

Total Gate Charge at 10V

Qgs

Gate to Source Gate Charge

Qgd

Gate to Drain “Miller” Charge

VDS = 25V, VGS = 0V f = 1MHz

VDS = 400V, ID = 20A VGS = 10V

(Note 4, 5)

-

2550

3390

pF

-

350

465

pF

-

27

40

pF

-

50

65

nC

-

14

-

nC

-

20

-

nC

Switching Characteristics td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

VDD = 250V, ID = 20A RG = 25Ω (Note 4, 5)

-

45

100

ns

-

120

250

ns

-

100

210

ns

-

60

130

ns

Drain-Source Diode Characteristics IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

20

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

80

A

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, ISD = 20A

-

-

1.5

V

trr

Reverse Recovery Time

154

-

ns

Qrr

Reverse Recovery Charge

VGS = 0V, ISD = 20A dIF/dt = 100A/μs

-

0.5

-

μC

(Note 4)

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 5mH, IAS = 20A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 20A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics

FDP20N50F / FDPF20N50FT Rev. C1

2

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FDP20N50F / FDPF20N50FT N-Channel MOSFET

Package Marking and Ordering Information TC = 25oC unless otherwise noted

Figure 1. On-Region Characteristics VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V

10

Figure 2. Transfer Characteristics 100

o

ID,Drain Current[A]

ID,Drain Current[A]

80

1

150 C o

25 C

10

*Notes: 1. 250μs Pulse Test

*Notes: 1. VDS = 20V 2. 250μs Pulse Test

o

2. TC = 25 C

1 VDS,Drain-Source Voltage[V]

1 10

20

4

5 6 7 VGS,Gate-Source Voltage[V]

Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature

0.5

400

0.4

VGS = 10V

0.3

VGS = 20V

0.2

100 o

150 C o

25 C

10

*Notes: 1. VGS = 0V

o

0.1

*Note: TJ = 25 C

0

25 50 ID, Drain Current [A]

1 0.0

75

Figure 5. Capacitance Characteristics

4500

3000

1500

0 0.1

Ciss

*Note: 1. VGS = 0V 2. f = 1MHz

Crss

1 10 VDS, Drain-Source Voltage [V]

FDP20N50F / FDPF20N50FT Rev. C1

2.5

10

Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd

VGS, Gate-Source Voltage [V]

Coss

2. 250μs Pulse Test

0.5 1.0 1.5 2.0 VSD, Body Diode Forward Voltage [V]

Figure 6. Gate Charge Characteristics

6000

Capacitances [pF]

8

Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage

IS, Reverse Drain Current [A]

RDS(ON) [Ω], Drain-Source On-Resistance

0.3 0.1

8

6

4

2

0

50

3

VDS = 100V VDS = 250V VDS = 400V

*Note: ID = 20A

0

10

20 30 40 50 Qg, Total Gate Charge [nC]

60

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FDP20N50F / FDPF20N50FT N-Channel MOSFET

Typical Performance Characteristics

Figure 7. Breakdown Voltage Variation vs. Temperature

Figure 8. Maximum Safe Operating Area - FDP20N50F 200

100 1.1

ID, Drain Current [A]

BVDSS, [Normalized] Drain-Source Breakdown Voltage

1.2

1.0

0.9 *Notes: 1. VGS = 0V 2. ID = 1mA

0.8 -100

-50 0 50 100 150 o TJ, Junction Temperature [ C]

1 ms 10 ms

10

100 ms Operation in This Area is Limited by R DS(on)

1

DC

*Notes:

0.1

o

1. TC = 25 C o

0.01 200

2. TJ = 150 C 3. Single Pulse

1

10 100 VDS, Drain-Source Voltage [V]

800

Figure 9. Maximum Safe Operating Area - FDPF20N50FT

Figure 10. Maximum Drain Current vs. Case Temperature

200 100

25

40μs 100μs

10

20 ID, Drain Current [A]

ID, Drain Current [A]

10 μs 100 μs

1ms 10ms

1

Operation in This Area is Limited by R DS(on) DC

*Notes:

0.1

o

15

10

5

1. TC = 25 C o

0.01

2. TJ = 150 C 3. Single Pulse

1

10 100 VDS, Drain-Source Voltage [V]

0 25

800

50 75 100 125 o TC, Case Temperature [ C]

150

Figure 11. Transient Thermal Response Curve - FDP20N50F

Thermal Response [ZθJC]

1

0.5

0.1

0.2

PDM

0.1

0.02

t2

*Notes:

0.01

o

1. ZθJC(t) = 0.5 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t)

single pulse

0.002 -5 10

t1 t2

t1

0.05

0.01

PDM

-4

10

-3

10

-2

-1

10

10

0

10

1

10

Rectangular Pulse Duration [sec]

FDP20N50F / FDPF20N50FT Rev. C1

4

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FDP20N50F / FDPF20N50FT N-Channel MOSFET

Typical Performance Characteristics (Continued)

FDP20N50F / FDPF20N50FT N-Channel MOSFET

Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve - FDPF20N50FT

Thermal Response [ZθJC]

5 0.5

1 0.2 0.1

PDM

0.05

0.1

t1

0.02 0.01

o

1. ZθJC(t) = 3.3 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t)

Single pulse

0.01 -4 10

FDP20N50F / FDPF20N50FT Rev. C1

t2

*Notes:

-3

10

-2

-1

0

1

10 10 10 10 Rectangular Pulse Duration [sec]

5

2

10

3

10

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FDP20N50F / FDPF20N50FT N-Channel MOSFET

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FDP20N50F / FDPF20N50FT Rev. C1

6

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FDP20N50F / FDPF20N50FT N-Channel MOSFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+ VDS _

I SD L Driver RG

VGS

VGS ( Driver )

Same Type as DUT

VDD

• dv/dt controlled by RG • ISD controlled by pulse period

Gate Pulse Width D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

I SD ( DUT )

di/dt

IRM Body Diode Reverse Current

VDS ( DUT )

Body Diode Recovery dv/dt

VDD

VSD

Body Diode Forward Voltage Drop

FDP20N50F / FDPF20N50FT Rev. C1

7

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TO-220 4.50 ±0.20

2.80 ±0.10 (3.00)

+0.10

1.30 –0.05

18.95MAX.

(3.70)

ø3.60 ±0.10

15.90 ±0.20

1.30 ±0.10

(8.70)

(1.46)

9.20 ±0.20

(1.70)

9.90 ±0.20

1.52 ±0.10

10.08 ±0.30

(1.00)

13.08 ±0.20

)

(45°

1.27 ±0.10

0.80 ±0.10 2.54TYP [2.54 ±0.20]

+0.10

0.50 –0.05

2.40 ±0.20

2.54TYP [2.54 ±0.20]

10.00 ±0.20

FDP20N50F / FDPF20N50FT Rev. C1

8

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FDP20N50F / FDPF20N50FT N-Channel MOSFET

Mechanical Dimensions

FDP20N50F / FDPF20N50FT N-Channel MOSFET

Mechanical Dimensions

TO-220F Potted

* Front/Back Side Isolation Voltage : AC 2500V

Dimensions in Millimeters

FDP20N50F / FDPF20N50FT Rev. C1

9

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2.

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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification

Product Status

Definition

Advance Information

Formative or In Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only Rev. I31

FDP20N50F / FDPF20N50FT Rev. C1

10

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FDP20N50F / FDPF20N50FT N-Channel MOSFET

TRADEMARKS