FAIRCHILD FDB9403

January 15, 2018 | Author: Anonymous | Category: N/A
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2012

FDB9403_F085 N-Channel Power Trench® MOSFET 40V, 110A, 1.2mΩ

D

D

Features „ Typ rDS(on) = 1mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 164nC at VGS = 10V, ID = 80A

G

„ UIS Capability „ RoHS Compliant

G

„ Qualified to AEC Q101

TO-263AB FDB SERIES

Applications

S S

„ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Electronic Steering „ Integrated Starter/alternator „ Distributed Power Architectures and VRM „ Primary Switch for 12V Systems

MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID EAS PD

Parameter

Gate to Source Voltage

Ratings 40

Units V

±20

V

Drain Current - Continuous (VGS=10) (Note 1)

TC = 25°C

110

Pulsed Drain Current

TC = 25°C

See Figure4

Single Pulse Avalanche Energy

(Note 2)

A

704

mJ

Power Dissipation

333

W

Derate above 25oC

2.22

W/oC

TJ, TSTG Operating and Storage Temperature RθJC

Thermal Resistance Junction to Case

RθJA

Maximum Thermal Resistance Junction to Ambient

-55 to + 175

oC

0.45

oC/W

43

oC/W

(Note 3)

Package Marking and Ordering Information Device Marking FDB9403

Device FDB9403_F085

Package TO-263AB

Reel Size 330mm

Tape Width 24mm

Quantity 800 units

Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 0.18mH, IAS = 88A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper.

©2012 Fairchild Semiconductor Corporation FDB9403_F085_F085 Rev. B1

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FDB9403_F085 N-Channel Power Trench® MOSFET

July

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics BVDSS

Drain to Source Breakdown Voltage

IDSS

Drain to Source Leakage Current

IGSS

Gate to Source Leakage Current

ID = 250μA, VGS = 0V VDS = 40V, VGS = 0V

40

-

-

V

-

-

1

μA mA nA

TJ = 25oC

TJ = 175oC(Note 4)

-

-

1

-

-

±100

2.0

3.13

4.0

V

-

1.0

1.2



-

1.63

1.96



VGS = ±20V

On Characteristics VGS(th) rDS(on)

Gate to Source Threshold Voltage Drain to Source On Resistance

VGS = VDS, ID = 250μA ID = 80A, VGS= 10V

TJ = 25oC

TJ = 175oC(Note 4)

Dynamic Characteristics Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate Resistance

f = 1MHz

Qg(ToT)

Total Gate Charge at 10V

VGS = 0 to 10V

Qg(th)

V GS = 0 to 2V

Qgs

Threshold Gate Charge Gate to Source Gate Charge

Qgd

Gate to Drain “Miller“ Charge

VDS = 25V, VGS = 0V, f = 1MHz

VDD = 20V ID = 80A

-

12700

-

pF

-

3195

-

pF

-

493

-

pF

-

2.9

-

Ω

-

164

213

nC

-

23

30

nC

-

59

-

nC

-

25

-

nC

Switching Characteristics ton

Turn-On Time

-

-

56

ns

td(on)

Turn-On Delay Time

-

16

-

ns

tr

Rise Time

td(off)

Turn-Off Delay Time

tf toff

-

19.5

-

ns

-

61

-

ns

Fall Time

-

46

-

ns

Turn-Off Time

-

-

171

ns

-

-

0.85 0.80

V V

VDD = 20V, ID = 80A, VGS = 10V, RGS = 1.5Ω

Drain-Source Diode Characteristics VSD

Source to Drain Diode Voltage

Trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ISD = 35A, VGS = 0V ISD = 15A, VGS = 0V IF = 80A, dISD/dt = 100A/μs

-

96

125

ns

-

149

194

nC

Notes: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.

FDB9403_F085 Rev. B1

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FDB9403_F085 N-Channel Power Trench® MOSFET

Electrical Characteristics TJ = 25°C unless otherwise noted

500

1.0

I D, DRAIN CURRENT (A)

POWER DISSIPATION MULTIPLIER

1.2

0.8 0.6 0.4 0.2 0.0

0

25

50 75 100 125 150 TC, CASE TEMPERATURE(oC)

CURRENT LIMITED BY PACKAGE

400

VGS = 10V

CURRENT LIMITED BY SILICON

300 200 100 0

175

25

50

75 100 125 150 175 TC, CASE TEMPERATURE(oC)

200

NOTE: Refer to Fairchild Application Notes AN9757

Figure 2. Maximum Continuous Drain Current vs Case Temperature

Figure 1. Normalized Power Dissipation vs Case Temperature DUTY CYCLE - DESCENDING ORDER

NORMALIZED THERMAL IMPEDANCE, ZθJC

1 D = 0.50 0.20 0.10 0.05 0.02 0.01

0.1

PDM

t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC

SINGLE PULSE

0.01 -5 10

-4

10

-3

-2

-1

0

10 10 10 t, RECTANGULAR PULSE DURATION(s)

1

10

10

Figure 3. Normalized Maximum Transient Thermal Impedance

VGS = 10V

I DM, PEAK CURRENT (A)

1000

100

TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 - TC

I = I2

150

SINGLE PULSE

10 -5 10

-4

10

-3

-2

-1

10 10 10 t, RECTANGULAR PULSE DURATION(s)

0

10

1

10

Figure 4. Peak Current Capability

FDB9403_F085 Rev. B1

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FDB9403_F085 N-Channel Power Trench® MOSFET

Typical Characteristics

1000 I AS, AVALANCHE CURRENT (A)

ID, DRAIN CURRENT (A)

10000 1000 100

100us

10

OPERATION IN THIS AREA MAY BE LIMITED BY r DS(on)

1 0.1 1

SINGLE PULSE TJ = MAX RATED TC = 25oC

1ms 10ms DC

10 V DS, DRAIN TO SOURCE VOLTAGE (V)

If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]

100 STARTING TJ = 25oC

10

STARTING TJ = 150oC

1 1E-3

100

0.01

0.1

1

10

100

1000 10000

tAV, TIME IN AVALANCHE (ms)

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 5. Forward Bias Safe Operating Area

150

PULSE DURATION = 80μ s DUTY CYCLE = 0.5% MAX VDD = 5V

100 TJ =

175oC

TJ = 25oC

o

TJ = -55 C

50

0 2

IS, REVERSE DRAIN CURRENT (A)

ID , DRAIN CURRENT (A)

200

Figure 6. Unclamped Inductive Switching Capability

3 4 5 V GS , GATE TO SOURCE VOLTAGE (V)

VGS = 0 V

TJ = 175 oC

T J = 25 oC

10

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 8. Forward Diode Characteristics

250

250

200

I D, DRAIN CURRENT (A)

I D, DRAIN CURRENT (A)

100

1

6

Figure 7. Transfer Characteristics

VGS 15V Top 10V 6V 5.5V 5 V Bottom

150 100 5V

50 0 0.0

200

80μs PULSE WIDTH Tj=25oC

150 5V

100 50 0 0.0

0.2 0.4 0.6 0.8 1.0 V DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 9. Saturation Characteristics

FDB9403_F085 Rev. B1

200 VGS 15V5.5V Top 10V 6V 5.5V 5V Bottom

80μs PULSE WIDTH Tj=175oC

0.2 0.4 0.6 0.8 1.0 V DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 10. Saturation Characteristics

4

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FDB9403_F085 N-Channel Power Trench® MOSFET

Typical Characteristics

ID = 80A

NORMALIZED DRAIN TO SOURCE ON-RESISTANCE

rDS(on) , DRAIN TO SOURCE ON-RESISTANCE ( Ω)

10

PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX

8 6 4 TJ = 175oC

2 0

TJ = 25oC

2

4 6 8 VGS, GATE TO SOURCE VOLTAGE (V)

1.0 ID = 80A VGS = 10V

0.8 0.6 -80

-40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC)

200

ID = 1mA

NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE

NORMALIZED GATE THRESHOLD VOLTAGE

1.2

1.2 VGS = VDS ID = 250μ A

1.0

1.1

0.8

1.0

0.6

0.9

-40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC)

0.8 -80

200

100000 Ciss

10000 Coss

1000 f = 1MHz VGS = 0V

Crss

1 10 100 V DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 15. Capacitance vs Drain to Source Voltage

FDB9403_F085 Rev. B1

-40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC)

200

Figure 14. Normalized Drain to Source Breakdown Voltage vs Junction Temperature

V GS, GATE TO SOURCE VOLTAGE(V)

Figure 13. Normalized Gate Threshold Voltage vs Temperature

CAPACITANCE (pF)

1.4

Figure 12. Normalized Rdson vs Junction Temperature

1.2

100 0.1

PULSE DURATION = 80μ s DUTY CYCLE = 0.5% MAX

1.6

10

Figure 11. Rdson vs Gate Voltage

0.4 -80

1.8

10

ID = 80A

8

VDD = 16V VDD = 20V

VDD = 24V

6 4 2 0

0

50 100 150 Q g, GATE CHARGE(nC)

200

Figure 16. Gate Charge vs Gate to Source Voltage

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FDB9403_F085 N-Channel Power Trench® MOSFET

Typical Characteristics

tm

tm

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2.

A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification

Product Status

Advance Information

Formative / In Design

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Definition

Preliminary

First Production

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed

Full Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Obsolete

Not In Production

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61

FDB9403_F085 Rev. B1

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FDB9403_F085 N-Channel Power Trench® MOSFET

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. F-PFS™ The Power Franchise® PowerTrench® 2Cool™ ® PowerXS™ FRFET® AccuPower™ Programmable Active Droop™ Global Power ResourceSM AX-CAP™* Green Bridge™ QFET® BitSiC® TinyBoost™ Build it Now™ QS™ Green FPS™ TinyBuck™ CorePLUS™ Quiet Series™ Green FPS™ e-Series™ TinyCalc™ CorePOWER™ RapidConfigure™ Gmax™ TinyLogic® CROSSVOLT™ GTO™ ™ TINYOPTO™ CTL™ IntelliMAX™ TinyPower™ Saving our world, 1mW/W/kW at a time™ Current Transfer Logic™ ISOPLANAR™ TinyPWM™ DEUXPEED® Marking Small Speakers Sound Louder SignalWise™ TinyWire™ Dual Cool™ SmartMax™ and Better™ TranSiC® EcoSPARK® SMART START™ MegaBuck™ TriFault Detect™ EfficentMax™ Solutions for Your Success™ MICROCOUPLER™ TRUECURRENT®* ESBC™ SPM® MicroFET™ μSerDes™ STEALTH™ MicroPak™ ® SuperFET® MicroPak2™ SuperSOT™-3 MillerDrive™ Fairchild® UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ SyncFET™ OptoHiT™ FAST® VisualMax™ Sync-Lock™ OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® ®* FETBench™ XS™ FlashWriter® * ® FPS™

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